Nanoscale Journal Cover Design Service (NMOS)

Nanoscale

31 Aug 2016

Nonassociative learning implementation by a single memristor-based multi-terminal synaptic device

Xue Yang,^a Yichen Fang,^a Zhizhen Yu,^a Zongwei Wang,^a Teng Zhang,^a Minhui Yin,^a Min Lin,^a Yuchao Yang,^ab Yimao Cai^*ab and Ru Huang^ab

10.1039/C6NR04142F

Here a three terminal device consisting of an oxide-based memristor and a NMOS transistor is proposed. The memristor with gradual conductance tuning inherently functions as the synapse between sensor neurons and motor neurons and presents adjustable synaptic plasticity, while the NMOS transistor attached to the memristor is utilized to mimic the modulatory effect of the neuromodulator released by inter neurons. Such a memristor-based multi-terminal device allows the practical implementation of significant nonassociative learning based on a single electronic device. In this study, the experience-induced modification behaviour, both habituation and sensitization, was successfully achieved. The dependence of the nonassociative behavioural response on the strength and interval of presented stimuli was also discussed.