Kun Zhang1,2, Yue Zhang1,*, Zhizhong Zhang1, Zhenyi Zheng1, Guanda Wang1, Youguang Zhang1,3, Qiwei Liu4, Shishen Yan4, Weisheng Zhao1,2,3,*
1 Fert Beijing Research Institute, School of Microelectronics, BDBC, Beihang University, 100191 Beijing, P. R. China
2 Beihang‐Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, 266101 Qingdao, P. R. China
3 Nanoelectronics Science and Technology Center, Hefei Innovation Research Institute, Beihang University, 230013 Hefei, P. R. China
4 School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100 Jinan, P. R. China