Hongliang Chang1,2†, Zhetong Liu3,4,5,6†, Shenyuan Yang2,7†, Yaqi Gao1,2, Jingyuan Shan3,5, Bingyao Liu3,4,5,6, Jingyu Sun5, Zhaolong Chen3,5, Jianchang Yan1,2, Zhiqiang Liu1,2, Junxi Wang1,2, Peng Gao3,4,5,6✉, Jinmin Li1,2✉, Zhongfan Liu3,5✉ and Tongbo Wei1,2✉
中科院半导体研究所魏同波研究员、李晋闽研究员,北京大学刘忠范院士、高鹏研究员
1 Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, China.
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China.
3 Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China.
4 Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, 100871 Beijing, China.
5 Beijing graphene institute (BGI), 100095 Beijing, China.
6 Academy for Advanced Interdisciplinary Studies, Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871 Beijing, China.
7 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, China
† These authors contributed equally: Hongliang Chang, Zhetong Liu, Shenyuan Yang