您的浏览器目前处于缩放状态,页面可能会出现错位现象,建议100%大小显示。(快捷键:Ctrl+0)

当前位置:首页 > 图像设计 > 发表快报

Adv. Sci. - 西安交通大学材料创新设计中心马恩教授、张伟教授

发布时间: 2022-10-26 来源: WILEY-VCH

Title: Designing Inorganic Semiconductors with Cold-Rolling Processability

Abstract: While metals can be readily processed and reshaped by cold rolling, most bulk inorganic semiconductors are brittle materials that tend to fracture when plastically deformed. Manufacturing thin sheets and foils of inorganic semiconductors is therefore a bottleneck problem, severely restricting their use in flexible electronic applications. It is recently reported that a few single-crystalline 2D van der Waals (vdW) semiconductors, such as InSe, are deformable under compressive stress. Here it is demonstrated that intralayer fracture toughness can be tailored via compositional design to make inorganic semiconductors processable by cold rolling. Systematic ab initio calculations covering a range of van der Waals semiconductors homologous to InSe are reported, leading to material-property maps that forecast trends in both the susceptibility to interlayer slip and the intralayer fracture toughness against cracking. GaSe is predicted, and experimentally confirmed, to be practically amenable to being rolled to large (three quarters) thickness reduction and length extension by a factor of three. The fracture toughness and cleavage energy are predicted to be 0.25 MPa m0.5 and 15 meV Å−2, respectively. The findings open a new realm of possibility for alloy selection and design toward processing-friendly group-III chalcogenides for practical applications.

客服:010-86468642