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Nature-加州大学洛杉矶分校段镶锋教授、黄昱教授

 
Nature
Vol. 557, No. 77707


March 8, 2018


Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions


Yuan Liu1,2, Jian Guo1, Enbo Zhu1, Lei Liao2, Sung-Joon Lee1, Mengning Ding1, Imran Shakir3, Vincent Gambin4, Yu Huang1,5* & Xiangfeng Duan5,6*

1 Department of Materials Science and Engineering, University of California, Los Angeles, CA, USA.
2 State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, and School of Physics and Electronics, Hunan University, Changsha, China.
3 Sustainable Energy Technologies Centre, College of Engineering, King Saud University, Riyadh, Saudi Arabia.
4 NG NEXT, Northrop Grumman Corporation, Redondo Beach, CA, USA.
5 California Nanosystems Institute, University of California, Los Angeles, CA, USA.
6 Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, USA.



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发布时间:2018-08-15  关注次数:584
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